GDS DRC LVS DOCS

Who

Carsten Wulff

Why

Example of a PTAT, and a stable current bias source

How

PTAT is based on traditional bandgap structure

Stable current with temperature is based on Banba

What

What Cell/Name
Schematic PTAT design/JNW_BIAS_SKY130A/JNW_BIAS.sch
Layout PTAT design/JNW_BIAS_SKY130A/JNW_BIAS.mag
Schematic Stable design/JNW_BIAS_SKY130A/JNW_BIAS_IBS.sch
Layout Stable design/JNW_BIAS_SKY130A/JNW_BIAS_IBS.mag

Key parameters

Parameter Min Typ Max Unit
Technology   Skywater 130 nm    
AVDD 1.7 1.8 1.9 V
Temperature -40 27 125 C

JNW_BIAS

Current proportional to temperature

Signal interface

Signal Direction Domain Description
VDD_1V8 Input VDD_1V8 Main supply
STARTUP_1V8 Input VDD_1V8 Injects current into PMOS current mirror when active
IBP_1U[3:0] Input VDD_1V8 PTAT bias currents (approx 1 uA)
VSS Input Ground  

JNW_BIAS_IBS

Current stable with temperature

Signal interface

Signal Direction Domain Description
VDD_1V8 Input VDD_1V8 Main supply
STARTUP_1V8 Input VDD_1V8 Injects current into PMOS current mirror when active
IBPS_1U[3:0] Input VDD_1V8 Stable bias currents (approx 1 uA)
VSS Input Ground