Metal in ICs is not wire in schematic
| Parameter | Typ. Value | Unit |
|---|---|---|
| Resistance | 150 | \(\text{m}\Omega/\square\) |
| Capacitance | 1 | \(\text{fF}/\mu\text{m}\) |
| Inductance | 1 | nH/mm |
| Max DC current | 1 | mA/\(\square\) |
2
| Parameter | Typ. Value | Unit |
|---|---|---|
| Resistance | 150 | \(\text{m}\Omega/\square\) |
| Capacitance | 1 | \(\text{fF}/\mu\text{m}\) |
| Inductance | 1 | nH/mm |
| Max DC current | 1 | mA/\(\square\) |
Can be both N-doped, and P-doped
Often with two flavors, with, and without silicide
Silicide reduces resistance of polysilicon
Use doped region as resistor
Usually without silicide
Non-linear capacitance
Tricky temperature dependence
Usually too low ohmic to be a useful resistor
Useful for "separating nets" in schematic and layout
Must be considered for power supply and ground routing (high currents)
Unit capacitance \(\approx 1 fF/\mu m^2/layer\)
\[10 pF = 100 \mu m \times 100 \mu m = 10 k \mu m^2\]
Usually two top metals, because they are thick (low ohmic)
Use foundry model
3D electro magnetic simulation often needed
Resistors and Capacitors can be matched extremely well
